c-749 CPV363MU igbt sip module features
c-750 CPV363MU
c-751 fig. 1 - rms current and output power, synthesized sine wave fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics
c-752 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature CPV363MU
c-753 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 1 1 0 1 0 0 c e c , c a p a c i t a n c e ( p f ) v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g e i e s g e g c c e r e s g c o e s c e g c c ? i e s c ? r e s c ? o e s 0 4 8 1 2 1 6 2 0 0 5 1 0 1 5 2 0 2 5 3 0 g e v , g a t e - t o - e m i t t e r v o l t a g e ( v ) q , t o t a l g a t e c h a r g e ( n c ) g ? v = 4 0 0 v ? i = 1 2 a c e c 0 . 5 4 0 . 5 6 0 . 5 8 0 . 6 0 0 . 6 2 0 . 6 4 0 . 6 6 0 1 0 2 0 3 0 4 0 5 0 6 0 g t o t a l s w i t c h i n g l o s s e s ( m j ) r , g a t e r e s i s t a n c e ( ) w w ? v = 4 8 0 v ? v = 1 5 v ? t = 2 5 c ? i = 1 2 a c c g e c c 0 . 1 1 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 c t , c a s e t e m p e r a t u r e ( c ) t o t a l s w i t c h i n g l o s s e s ( m j ) i = 2 4 a i = 1 2 a i = 6 . 0 a c c c r = 2 3 v = 1 5 v v = 4 8 0 v w g g e c c CPV363MU
c-754 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current
c-755
c-756
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